Development of InSb/GaSb quantum dots by MOVPE
- Authors: Ahia, Chinedu Christian
- Date: 2018
- Subjects: Semiconductors , Quantum electronics Organometallic compounds
- Language: English
- Type: Thesis , Doctoral , DPhil
- Identifier: http://hdl.handle.net/10948/23382 , vital:30537
- Description: There has been an increasing interest in the modification of semiconductor band structures through the reduction of their dimensions, which simultaneously increases the band gap energy of the material and gives rise to flexibility in device properties. Advances in III-V antimony (Sb) based semiconductor fabrication have triggered the quest for extension of the emission/absorption wavelength range of this family of compounds for optoelectronic devices operating in the mid-infrared region of the electromagnetic spectrum. An interesting material system for mid-infrared (MIR) applications is indium antimonide (InSb) quantum dots (QDs) within a gallium antimonide (GaSb) matrix. However, its band alignment and emission wavelength has been the subject of some interest and controversy over the years. This study focuses on the development of InSb/GaSb QDs by metal organic vapour phase epitaxy (MOVPE). The samples were grown on different substrates using various growth parameters in order to vary the size, density and aspect ratio of the dots. Interfacial growth interruptions while flowing various source precursors through the reactor were investigated in order to influence the chemical termination of the surface, and hence the resulting strain in the structures. The samples were characterized using photoluminescence spectroscopy, scanning probe microscopy, scanning electron microscopy, X-ray diffraction and transmission electron microscopy. Likewise, the band alignment, energy levels, and carrier wave functions of the samples in this work were modelled theoretically using the nextnanomat software (version 3.1.0.0). A comparison of growth on two different GaSb substrates [(100) 2° off towards <111>B ± 0.1ᵒ and (111) ± 0.1ᵒ] using similar growth conditions yielded a higher dot density on the (100) substrate compared to the (111) substrate. This was attributed to the presence of terraces/atomic steps induced by the misorientation on the (100) substrate, which invariably gives rise to increased adsorption and an enhanced sticking coefficient of adatoms. Studies on the influence of a buffer layer on the morphology of uncapped dots showed that the shape and size of the dots are sensitive to the thickness of the buffer layer. In some case a corrugated buffer surface resulted, which introduced order in the arrangement of the dots, which formed preferentially inside the troughs. An increase in the V/III ratio from 1.0 to 3.0 was found to reduce the areal density of the QDs, while an analysis of the diameter histograms showed a narrowing of the size distribution with an increase in V/III ratio. The larger size distribution at low V/III was ascribed to the increase in indium species and the increased indium adatom migration length. This leads to increased dot density and nucleation sites, and thus triggers an increase in the conversion of tiny QDs into thermodynamically more suitable larger dots via coalescence. However, as the V/III ratio increased, the number of indium adatoms available for growth on the surface reduced, which automatically led to a decrease in the migration length of indium species which is unfavourable for the production of nucleation sites and to a decrease in dot density. Low growth rates were found to be beneficial for the growth of a high density (~5×1010cm-2) of QDs. Photoluminescence (PL) analysis of the capped samples at low temperature (~10 K), using an excitation power of 2 mW, showed a PL peak at ∼732 meV. Upon an increase in laser power to 120 mW, a blue shift of ∼ 8 meV was noticed. This emission typically persisted up to 60–70 K. An increase in the number of InSb QD-layers, was observed to cause an increase in the luminescence spectral line width and a long-wavelength shift of the PL lines, together with an enhancement in the strength of the PL emission. However, high resolution transmission electron microscopy (HRTEM) of the capped dots revealed the formation of an InGaSb quantum well-like structure, ∼10 nm thick, which was responsible for the PL signal mentioned above. The absence of QDs in the capped sample was attributed to inter-diffusion of Ga and In during the deposition of the cap layer, giving rise to a quantum well (QW) instead of the intended QDs. The presence of threading dislocations and stacking faults were also observed in the TEM micrographs of the samples containing multilayers, which can account for the fast quenching of the PL emission with increasing temperature from these samples. Theoretical simulations of the band alignment, wave functions and energy levels were in good agreement with the data collected from the PL spectra of the samples.
- Full Text:
- Date Issued: 2018
- Authors: Ahia, Chinedu Christian
- Date: 2018
- Subjects: Semiconductors , Quantum electronics Organometallic compounds
- Language: English
- Type: Thesis , Doctoral , DPhil
- Identifier: http://hdl.handle.net/10948/23382 , vital:30537
- Description: There has been an increasing interest in the modification of semiconductor band structures through the reduction of their dimensions, which simultaneously increases the band gap energy of the material and gives rise to flexibility in device properties. Advances in III-V antimony (Sb) based semiconductor fabrication have triggered the quest for extension of the emission/absorption wavelength range of this family of compounds for optoelectronic devices operating in the mid-infrared region of the electromagnetic spectrum. An interesting material system for mid-infrared (MIR) applications is indium antimonide (InSb) quantum dots (QDs) within a gallium antimonide (GaSb) matrix. However, its band alignment and emission wavelength has been the subject of some interest and controversy over the years. This study focuses on the development of InSb/GaSb QDs by metal organic vapour phase epitaxy (MOVPE). The samples were grown on different substrates using various growth parameters in order to vary the size, density and aspect ratio of the dots. Interfacial growth interruptions while flowing various source precursors through the reactor were investigated in order to influence the chemical termination of the surface, and hence the resulting strain in the structures. The samples were characterized using photoluminescence spectroscopy, scanning probe microscopy, scanning electron microscopy, X-ray diffraction and transmission electron microscopy. Likewise, the band alignment, energy levels, and carrier wave functions of the samples in this work were modelled theoretically using the nextnanomat software (version 3.1.0.0). A comparison of growth on two different GaSb substrates [(100) 2° off towards <111>B ± 0.1ᵒ and (111) ± 0.1ᵒ] using similar growth conditions yielded a higher dot density on the (100) substrate compared to the (111) substrate. This was attributed to the presence of terraces/atomic steps induced by the misorientation on the (100) substrate, which invariably gives rise to increased adsorption and an enhanced sticking coefficient of adatoms. Studies on the influence of a buffer layer on the morphology of uncapped dots showed that the shape and size of the dots are sensitive to the thickness of the buffer layer. In some case a corrugated buffer surface resulted, which introduced order in the arrangement of the dots, which formed preferentially inside the troughs. An increase in the V/III ratio from 1.0 to 3.0 was found to reduce the areal density of the QDs, while an analysis of the diameter histograms showed a narrowing of the size distribution with an increase in V/III ratio. The larger size distribution at low V/III was ascribed to the increase in indium species and the increased indium adatom migration length. This leads to increased dot density and nucleation sites, and thus triggers an increase in the conversion of tiny QDs into thermodynamically more suitable larger dots via coalescence. However, as the V/III ratio increased, the number of indium adatoms available for growth on the surface reduced, which automatically led to a decrease in the migration length of indium species which is unfavourable for the production of nucleation sites and to a decrease in dot density. Low growth rates were found to be beneficial for the growth of a high density (~5×1010cm-2) of QDs. Photoluminescence (PL) analysis of the capped samples at low temperature (~10 K), using an excitation power of 2 mW, showed a PL peak at ∼732 meV. Upon an increase in laser power to 120 mW, a blue shift of ∼ 8 meV was noticed. This emission typically persisted up to 60–70 K. An increase in the number of InSb QD-layers, was observed to cause an increase in the luminescence spectral line width and a long-wavelength shift of the PL lines, together with an enhancement in the strength of the PL emission. However, high resolution transmission electron microscopy (HRTEM) of the capped dots revealed the formation of an InGaSb quantum well-like structure, ∼10 nm thick, which was responsible for the PL signal mentioned above. The absence of QDs in the capped sample was attributed to inter-diffusion of Ga and In during the deposition of the cap layer, giving rise to a quantum well (QW) instead of the intended QDs. The presence of threading dislocations and stacking faults were also observed in the TEM micrographs of the samples containing multilayers, which can account for the fast quenching of the PL emission with increasing temperature from these samples. Theoretical simulations of the band alignment, wave functions and energy levels were in good agreement with the data collected from the PL spectra of the samples.
- Full Text:
- Date Issued: 2018
On the characterisation of photovoltaic device parameters using light beam induced current measurements
- Bezuidenhout, Lucian John-Ross
- Authors: Bezuidenhout, Lucian John-Ross
- Date: 2015
- Subjects: Solar cells--Materials , Semiconductors
- Language: English
- Type: Thesis , Masters , MSc
- Identifier: vital:10551 , http://hdl.handle.net/10948/d1020282
- Description: Light Beam Induced Current (LBIC) measurement is a non-destructive technique used to perform localized characterization of solar cells using a light beam as a probe. The technique allows the determination of local photo response of a cell, the electrical parameters and defects that occur in the individual solar cell. The semiconductor materials used to create solar cells are not always defect free and these defects reduce the electrical performance of the device. It is therefore important to use a system that will allow the characterization and extract the solar cell parameters as can be done using the LBIC system. By analysing these parameters and cell defects, further studies can be done to enhance the cell’s lifetime and hence its efficiency. Light beam induced current (LBIC) is a technique that focuses light onto a solar cell device and thus creating a photo-generated current that can be measured in the external circuit for analyses. By scanning this beam probe across a solar cell while measuring the current-voltage characteristics, a map of various parameters can be obtained. This thesis presents the design of the LBIC system, the software interfacing of the data acquisition system and local photo-response within different solar cell technologies. In addition, this thesis represent two curve fitting algorithms namely: the Gradient Descent Optimisation and the Differential Evolution used for the extraction of solar cell device parameters. The algorithms are based on the one-diode solar cell model and make use of the light generated current-voltage (I-V) data obtained from the LBIC system. Different solar cell technologies namely; single crystalline (c-Si) and multicrystalline silicon (mc-Si) was used for analysis. LBIC maps and I-V characteristics of both technologies was obtained. The LBIC maps shows performance degrading defects present in the bulk and the surface of the solar cells as a function of spatial distribution. These localised defects acts as trapping mechanism for the charge carriers and therefore limits recombination within the solar cell and thus decreasing the performance of the solar cell device. The resulting I-V characteristics obtained from the LBIC system were used to determine the performance parameters using the two algorithms. The resultant effect of these parameters on the performance of the solar cells was observed. The overall results showed that LBIC is a useful tool for identifying and characterising defects in solar cells.
- Full Text:
- Date Issued: 2015
- Authors: Bezuidenhout, Lucian John-Ross
- Date: 2015
- Subjects: Solar cells--Materials , Semiconductors
- Language: English
- Type: Thesis , Masters , MSc
- Identifier: vital:10551 , http://hdl.handle.net/10948/d1020282
- Description: Light Beam Induced Current (LBIC) measurement is a non-destructive technique used to perform localized characterization of solar cells using a light beam as a probe. The technique allows the determination of local photo response of a cell, the electrical parameters and defects that occur in the individual solar cell. The semiconductor materials used to create solar cells are not always defect free and these defects reduce the electrical performance of the device. It is therefore important to use a system that will allow the characterization and extract the solar cell parameters as can be done using the LBIC system. By analysing these parameters and cell defects, further studies can be done to enhance the cell’s lifetime and hence its efficiency. Light beam induced current (LBIC) is a technique that focuses light onto a solar cell device and thus creating a photo-generated current that can be measured in the external circuit for analyses. By scanning this beam probe across a solar cell while measuring the current-voltage characteristics, a map of various parameters can be obtained. This thesis presents the design of the LBIC system, the software interfacing of the data acquisition system and local photo-response within different solar cell technologies. In addition, this thesis represent two curve fitting algorithms namely: the Gradient Descent Optimisation and the Differential Evolution used for the extraction of solar cell device parameters. The algorithms are based on the one-diode solar cell model and make use of the light generated current-voltage (I-V) data obtained from the LBIC system. Different solar cell technologies namely; single crystalline (c-Si) and multicrystalline silicon (mc-Si) was used for analysis. LBIC maps and I-V characteristics of both technologies was obtained. The LBIC maps shows performance degrading defects present in the bulk and the surface of the solar cells as a function of spatial distribution. These localised defects acts as trapping mechanism for the charge carriers and therefore limits recombination within the solar cell and thus decreasing the performance of the solar cell device. The resulting I-V characteristics obtained from the LBIC system were used to determine the performance parameters using the two algorithms. The resultant effect of these parameters on the performance of the solar cells was observed. The overall results showed that LBIC is a useful tool for identifying and characterising defects in solar cells.
- Full Text:
- Date Issued: 2015
Epitaxial growth and characterisation of CuGaS2
- Authors: Branch, Matthew Stewart
- Date: 2006
- Subjects: Epitaxy , Chalcopyrite , Semiconductors
- Language: English
- Type: Thesis , Doctoral , PhD
- Identifier: vital:10541 , http://hdl.handle.net/10948/438 , http://hdl.handle.net/10948/d1012893 , Epitaxy , Chalcopyrite , Semiconductors
- Description: In this work, the growth and characterisation of the chalcopyrite semiconductor CuGaS2 is presented. The purpose of this study is to gain a better understanding of the defect chemistry of this class of materials through a systematic study relating the structural and optical properties to the composition of thin films grown by metalorganic vapour phase epitaxy. Details associated with the optimisation of the growth process are presented in a format relating the changes in the composition and morphology to variations in the growth process. The structural properties of thin films grown on GaAs(001) substrates are described. A dominance of polycrystalline growth is found to occur for Cu-rich material, whereas near-stoichiometric to Ga-rich material is typified by epitaxial growth. Secondary phases are identified by X-ray diffractometry and Raman spectroscopy for severely non-stoichiometric material. In some cases, the formation of the cubic zincblende and CuPt polytype of CuGaS2 are identified by transmission electron microscopy. It will be shown that changes in the Cu/Ga ratio of the solid strongly influence the photoluminescence response of the layers. Weak excitonic luminescence is observed for both slightly Ga-rich and Cu-rich material. Near stoichiometric layers exhibit luminescence centered at ~2.4 eV. Cu-rich layers are dominated by a line occurring at ~2.1 eV, whereas a different line at ~2.25 eV dominates for Ga-rich layers. A clear picture emerges of the radiative mechanisms dominating for Cu-rich and Ga-rich layers.
- Full Text:
- Date Issued: 2006
- Authors: Branch, Matthew Stewart
- Date: 2006
- Subjects: Epitaxy , Chalcopyrite , Semiconductors
- Language: English
- Type: Thesis , Doctoral , PhD
- Identifier: vital:10541 , http://hdl.handle.net/10948/438 , http://hdl.handle.net/10948/d1012893 , Epitaxy , Chalcopyrite , Semiconductors
- Description: In this work, the growth and characterisation of the chalcopyrite semiconductor CuGaS2 is presented. The purpose of this study is to gain a better understanding of the defect chemistry of this class of materials through a systematic study relating the structural and optical properties to the composition of thin films grown by metalorganic vapour phase epitaxy. Details associated with the optimisation of the growth process are presented in a format relating the changes in the composition and morphology to variations in the growth process. The structural properties of thin films grown on GaAs(001) substrates are described. A dominance of polycrystalline growth is found to occur for Cu-rich material, whereas near-stoichiometric to Ga-rich material is typified by epitaxial growth. Secondary phases are identified by X-ray diffractometry and Raman spectroscopy for severely non-stoichiometric material. In some cases, the formation of the cubic zincblende and CuPt polytype of CuGaS2 are identified by transmission electron microscopy. It will be shown that changes in the Cu/Ga ratio of the solid strongly influence the photoluminescence response of the layers. Weak excitonic luminescence is observed for both slightly Ga-rich and Cu-rich material. Near stoichiometric layers exhibit luminescence centered at ~2.4 eV. Cu-rich layers are dominated by a line occurring at ~2.1 eV, whereas a different line at ~2.25 eV dominates for Ga-rich layers. A clear picture emerges of the radiative mechanisms dominating for Cu-rich and Ga-rich layers.
- Full Text:
- Date Issued: 2006
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